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Valence and atomic size dependent exchange barriers in vacancy-mediated dopant diffusion
J. Stuart Nelson,
Peter A. Schultz
, Alan Wright
Year
1998
Venue
Applied Physics Letters
Type
article
Citations
65
DOI
10.1063/1.121779
OpenAlex
W1988756803
Topics
Silicon and Solar Cell Technologies
Dopant
Vacancy defect
Pseudopotential
Valence (chemistry)
Materials science