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Two-dimensional analysis of the surface recombination effect on current gain for GaAlAs/GaAs HBTs
Yoshiko Someya Hiraoka,
Jiro Yoshida
Year
1988
Venue
IEEE Transactions on Electron Devices
Type
article
Citations
45
DOI
10.1109/16.3336
OpenAlex
W1983513460
Topics
Advancements in Semiconductor Devices and Circuit Design
Bipolar junction transistor
Heterojunction
Recombination
Optoelectronics
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