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Emitter—Base bandgap grading effects on GaAlAs/GaAs heterojunction bipolar transistor characteristics
Jiro Yoshida
, M. Kurata, K. Morizuka, A. Hojo
Year
1985
Venue
IEEE Transactions on Electron Devices
Type
article
Citations
56
DOI
10.1109/t-ed.1985.22185
OpenAlex
W2072892532
Topics
Semiconductor Quantum Structures and Devices
Common emitter
Bipolar junction transistor
Optoelectronics
Materials science
Heterostructure-emitter bipolar transistor