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Analysis of high electron mobility transistors based on a two-dimensional numerical model

Jiro Yoshida, M. Kurata
Year1984
VenueIEEE Electron Device Letters
Typearticle
Citations25
DOI10.1109/edl.1984.26007
OpenAlexW1973834768

Topics

Quantum and electron transport phenomenaVelocity overshootTransistorOvershoot (microwave communication)Electron mobilityInduced high electron mobility transistor